Wavelength-Dependent Photoluminescence Mapping of Depth-Dependent Degradation Under Thermal Stress in Phenethylammonium Tetrafluoroborate Treated Perovskite Solar Cells

Abstract

Abstract Studying real-time degradation in perovskite semiconductors remains an important challenge. Conventional methods often cannot separate interfacial and bulk processes or rely on destructive analysis. Here, we demonstrate multiwavelength excitation photoluminescence (PL) as a nondestructive approach to distinguish interface- and bulk-dominated recombination losses. Using phenethylammonium tetrafluoroborate (PEABF4) treatment as a model, we use PL to show that PEABF4 passivates the electron transport layer (ETL)/perovskite interface, reducing interfacial recombination losses from fullerene deposition. However, upon thermal aging, PEABF4-treated stacks degrade more rapidly, with recombination losses broadening from the ETL/perovskite interface into the absorber. Diffusion–recombination simulations support interpreting excitation-wavelength-dependent PL decay signatures consistent with changes in surface recombination velocity and bulk lifetime, providing a framework for depth-sensitive comparisons during aging. Collectively, these results further establish multiwavelength excitation PL as a platform for studying recombination losses during aging of perovskite films.