Materials & Energyarticle2026-10-02

Control of Electronic Properties of Organic–Inorganic MXenes via Surface Functionalization

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Abstract

Abstract Surface terminations critically affect the electronic structure of two-dimensional (2D) transition metal carbides and nitrides (MXenes), yet the synthetic exploration has been hindered by the lack of predictive factors. Here, we establish that the number of lone-pair electrons (LPEs) on an organic ligand serves as a key factor governing the synthesis of organic-inorganic hybrid MXenes. Experimentally, successful surface functionalization is strongly dominated by 3-LPE ligands, enabling the synthesis of a broad library of over 20 distinct organically terminated MXenes (OT-MXenes). DFT calculations on representative experimentally realized terminations further show that the investigated 3-LPE ligands preferentially stabilize highly coordinated FCC configurations, providing a microscopic connection between LPE availability, surface coordination, and the experimentally observed functionalization behavior. Remarkably, organic surface termination enables the intrinsic carrier density of MXenes to be tuned over 7-8 orders of magnitude. This unprecedented level of control provides access to the intrinsically high carrier mobility in the low-carrier-density regime. In particular, hexanamide-terminated Ti3C2 exhibits an electron mobility of ∼48 cm2 V–1 s–1, representing an improvement of more than two orders of magnitude compared to metallic Ti3C2Tx. Our work clarifies a fundamental design principle for MXene surface engineering, which may guide the precise synthesis of organic-inorganic hybrid MXenes with tailored terminations and properties, thereby promoting MXene device applications and advancing the development of organic-inorganic 2D materials.

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View paper (DOI)OpenAlexJournal of the American Chemical SocietyPublished 2026-10-02

Authors: Tianze Zhang, Guozheng Zhang, Shengwen Liu, Xiaohang Niu, Tianpeng Ding, Ming Li, Bin Yang, Zelin Zhao, Ye‐Chuang Han, Yicheng Zhao, Sai Bai, Ao Liu, Liang Cheng, Jingbo 静波 Qi 齐, Hai I. Wang, Yongzheng Wen, Qing Huang, Xu Rui Xiao

Institutions: Ningbo University, Xiamen University, University of Electronic Science and Technology of China, Tsinghua University, Utrecht University