Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit
Abstract
The International Roadmap for Devices and Systems (IRDS) has identified the tunnel field-effect transistor (TFET) as the most promising next-generation logic device that enables sustainable downscaling in driving voltage and power consumption. Demonstrating an acceptable sub–Boltzmann-limit ON current (namely I 60 , the current level when a TFET switches to a subthreshold swing level of 60 millivolts per decade) and current-switching ratio has presented a formidable challenge. We report a TFET based on a bismuth/indium selenide (Bi/InSe) heterostructure that exhibits an I 60 of up to ~10 microamperes per micrometer and a current-switching ratio of >10 7 . We attribute such promising TFETs to precise material design, clean interfaces fabricated under vacuum, and band engineering based on subthreshold swing physics. Our results demonstrate a high-performance basic building block that meets the IRDS requirements for next-generation integrated circuits.
// Source
Authors: Zehan Wu, Ke Yang, Wanqing Meng, Weizhen Wang, Yifei Zhao, Fumei Yang, Ran Ding, Hui Li, Yudong Peng, Zongmeng Yang, Yee Sin Ang, Songhua Cai, Ming Yang, Jiannong Wang, Lain‐Jong Li, Jianhua Hao
Institutions: Peking University, Hong Kong Polytechnic University, National University of Singapore, Hong Kong University of Science and Technology, Singapore Institute of Technology, Singapore University of Technology and Design