Lain‐Jong Li

MultifunctionalSingle-Transistor Architecture Enabledby Nonvolatile Band Rearrangement in 2D Ferroelectric Tunneling Junction

Abstract A defining challenge for next-generation nanoelectronics is integrating diverse functionalities within a single device while strictly minimizing power consumption. Two-dimensional (2D) ferroelectrics, with their atomic-scale nonvolatility, offer a promising platform for...