Lain‐Jong Li

A spiking neural network-in-logic architecture based on reconfigurable molybdenum disulfide dual-gate transistors with ferroelectric gating

Efficient processing of high-dimensional perceptual data is a challenge in modern electronics, as neuromorphic systems typically process all input features indiscriminately, leading to excessive neuronal activation and high energy consumption. A key issue is the lack of a hardwar...

Direct evaporation of single-crystal metal contacts for 2D semiconductors

Metal contacts remain one of the key bottlenecks in two-dimensional (2D) semiconductor electronics. We developed an atomic-scale step-by-step evaporation method to directly grow single-crystal metals on monolayer semiconductors with clean interfaces. This method accesses a distin...

Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit

The International Roadmap for Devices and Systems (IRDS) has identified the tunnel field-effect transistor (TFET) as the most promising next-generation logic device that enables sustainable downscaling in driving voltage and power consumption. Demonstrating an acceptable sub–Bolt...

MultifunctionalSingle-Transistor Architecture Enabledby Nonvolatile Band Rearrangement in 2D Ferroelectric Tunneling Junction

Abstract A defining challenge for next-generation nanoelectronics is integrating diverse functionalities within a single device while strictly minimizing power consumption. Two-dimensional (2D) ferroelectrics, with their atomic-scale nonvolatility, offer a promising platform for...