Datasheet-Based Empirical Trend Analysis of Gate Charge in Commercial Si, SiC Power MOSFETs

Abstract

Gate charge is an important parameter related to the switching and gate-driving characteristics of power MOSFETs. This study presents a datasheet-based empirical trend analysis of 204 commercial 650 V and 1200 V Si and SiC MOSFETs. The relationships among gate charge, gate-drain charge, rated continuous drain current, on-resistance, input capacitance, and gate-charge test voltage were evaluated using Spearman rank correlation with two-sided testing. The SiC devices were generally characterized at higher gate-source test voltages. The findings provide quantitative reference data for power-MOSFET selection and gate-driver design.