Yong-Sang Kim

Datasheet-Based Empirical Trend Analysis of Gate Charge in Commercial Si, SiC Power MOSFETs

Gate charge is an important parameter related to the switching and gate-driving characteristics of power MOSFETs. This study presents a datasheet-based empirical trend analysis of 204 commercial 650 V and 1200 V Si and SiC MOSFETs. The relationships among gate charge, gate-drain...