Monolithic three-dimensionally integrated memristor-thin-film transistor for electrically programmable multimode reservoir computing
Abstract
Reservoir computing offers an efficient framework for processing temporal information, but most hardware reservoirs exhibit fixed or narrowly tunable dynamics determined by intrinsic material relaxation time. A monolithically integrated memristor-thin-film transistor reservoir kernel of this study enables electrically programmable temporal dynamics across a wide timescale. By vertically and monolithically integrating Ru/HfO2/TiN memristors with In2O3 channel thin-film transistors (TFTs), the memristive conductance dynamics are modulated by the TFTs. The temporal response can be actively tuned over three orders of magnitude experimentally and extended to over eight orders of magnitude via circuit configuration, demonstrating temporally unconstrained hardware with general applicability for spatiotemporal data processing. Implemented as an active reservoir array compatible with back-end-of-line integration, the system exhibits reliable spatiotemporal responses. The system demonstrates spatiotemporal computing capability through dynamic motion recognition in vision sensors and ultrasound signal classification, achieving high accuracy with a simple linear readout layer. Current reservoir computing hardware is efficient but limited by fixed dynamics. Shim et al. report a monolithically integrated memristor-transistor reservoir with electrically programmable temporal dynamics, supporting multiple temporal processing modes for motion recognition and biomedical signal classification.
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Authors: Sung Keun Shim, Wonho Choi, Sunwoo Cheong, Dong Hoon Shin, Jonghoon Shin, Janguk Han, Jiseong Im, Sungho Kim, Kunhee Son, Hyun Wook Kim, Jin Hong Kim, Jea Min Cho, Junwoo Park, Byongwoo Park, Yoon Ho Jang, Cheol Seong Hwang
Institutions: Yonsei University, Seoul National University