Tunable Zeeman Splitting in GaAs 1− x − y N x Bi y Nanowires by Axial Uniaxial Stress

Abstract

The realization of large and tunable Zeeman splitting and the effective g factor is key for spin control in spintronics and quantum information processing. Although marked Zeeman splitting and effective g factor have been demonstrated in GaAs 1− x Bi x nanowires, the effects of nitrogen incorporation and uniaxial stress on the Zeeman effect remain unexplored. In view of this, the electronic structure and Zeeman splitting characteristics of cylindrical GaAs 1− x − y N x Bi y nanowires under an axial magnetic field and uniaxial tensile stress are systematically investigated, using a combination of the effective‐mass theory with the valence‐band anticrossing and conduction‐band anticrossing models. The calculation results show that dilute nitrogen incorporation has a minimal effect on the Zeeman splitting, whereas uniaxial tensile stress applied along the [001] direction leads to an exponential increase in the Zeeman splitting energy. At U 001 = 6 GPa, the splitting energy and effective g factor are enhanced nearly twofold relative to their unstrained values. Moreover, the simulated normalized magnetic circular dichroism spectra provide further evidence for the observed trends in spectral features and Zeeman splitting. These findings highlight the significant potential of GaAs 1− x − y N x Bi y nanowires as a platform for quantum information processing.