Materials & Energyarticle2026-09-26

Grain boundary complexions stabilize Mg3Sb2-based thermoelectric devices with superior performance

Open access0 citations

Abstract

Grain boundary complexions stabilize Mg 3 Sb 2 -based thermoelectric devices with superior performanceGraphical abstract Highlights • Ga-rich grain boundary complexions block Mg-diffusion channels • Mg 3 Sb 2 materials stabilize at 718 K for over 80 h• Single-leg device shows 13.7% maximum efficiency and at least 7-day stability • A two-pair device shows a high efficiency of 12.5% at ΔT =

// Source

Open access version Publisher page OpenAlexMPG.PuRe (Max Planck Society)Published 2026-09-26

Authors: G. Yang, Z. Wang, Y. Liu, D. Mattlat, L. Hu, F. Liu, C. Scheu, G. Snyder, M. Wuttig, Y. Yu, S. Zhang, C. Zhang

Institutions: Northwestern University, RWTH Aachen University, Shenzhen University, Forschungszentrum Jülich, Max-Planck-Institut für Nachhaltige Materialien, Guangdong Research Center for Interfacial Engineering of Functional Materials

Advanced Thermoelectric Materials and Devices Quantum and electron transport phenomena Heusler alloys: electronic and magnetic properties