Highly Efficient Exciton Modulation in MoSe2/PdSe2 Heterostructures
Abstract
Abstract We report a pronounced ∼6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe2/PdSe2 van der Waals heterostructure, yielding a photoluminescence quantum yield of 6%, as compared to ∼1% for as-exfoliated monolayer MoSe2. This unusual enhancement is accompanied by strong quenching of the B exciton, consistent with interlayer electronic coupling that redistributes exciton populations toward the radiative A-exciton channel. Power- and temperature-dependent measurements reveal a suppression of exciton–exciton annihilation and a crossover to quenched emission at a low temperature, indicating a redistribution of exciton relaxation pathways. Photoluminescence excitation spectroscopy further reveals a broadband enhancement spanning 450–725 nm. These results demonstrate that interlayer electronic coupling can be used as an efficient means to redirect exciton populations toward radiative channels, enhancing emission efficiency in two-dimensional semiconductors without chemical modification or significant strain.
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Authors: Petr Rozhin, Muhammad Sufyan Ramzan, Emma Contin, Danae Katrisioti, Till Weickhardt, Micol Bertolotti, Nouha Loudhaief, Bing Wu, Zdeněk Sofer, Takashi Taniguchi, Kenji Watanabe, Leonardo Puppulin, Caterina Cocchi, Ioannis Paradisanos, Giancarlo Soavi, Stefano Dal Conte, Giovanni A. Salvatore, Domenico De Fazio
Institutions: Politecnico di Milano, University of Chemistry and Technology, Prague, Friedrich Schiller University Jena, National Institute for Materials Science, University of Crete, Ca' Foscari University of Venice, Foundation for Research and Technology Hellas, Schiller International University