Dissecting the transition metal dichalcogenides-based metal-oxide-semiconductor structures charge components

Abstract

Abstract Different variable charges such as interface traps, oxide border traps, and mobile carriers can contribute to the total capacitance in metal oxide semiconductor (MOS) field-effect devices. This study aims to quantify these charge components using multi-frequency, multi-temperature capacitance–voltage/conductance–voltage (C–V/G–V) scans with interface trap density profile mapping combined with Hall measurements on fully depleted few-layer transition metal dichalcogenides (MX 2 )-based MOS devices. In addition, C–V/G–V simulations based on a distributed network MOS model for two-dimensional (2D) materials have been incorporated to verify the interface trap charge component. The results of this study reveal that mobile carriers dominate the total carrier population, accounting for 58%–74%, while interface trap charges contribute an additional 18%–29% of the total charge. In contrast, oxide border traps constitute 7%–12% of the overall charges. This method for the quantification of the different charge components provides fundamental information for the design and optimization of emerging MX 2 -based devices.