Emerging Two‐Dimensional vdW Materials and Their Heterostructures for Memristive Devices: Advances, Challenges, and Perspectives

Abstract

ABSTRACT The continuous scaling of conventional CMOS technology has posed critical challenges for modern electronic systems, including high power consumption and limited memory density. The major challenge in current computing systems is the von Neumann bottleneck, which arises from frequent data transfers between memory and computing units, resulting in increased power consumption. These issues emphasize the importance of memristors as next‐generation electronic devices capable of meeting the growing demand for energy‐efficient and high‐performance computation. Memristors provide a solution by combining memory and calculation within a single device, offering nonvolatile data storage and resistance modulation. Researchers explored next‐generation 2D vdW materials and their heterostructures as resistive materials for memristors. Here, we present the current advances in memristors based on 2D vdW materials and their heterostructures. Also, analysing their critical resistive‐switching behavior under external bias and their suitability for various applications. This review highlights key performance metrics, including power consumption, endurance, retention time, On/Off ratio, and their dependence on material properties and device architecture. Finally, conclude with challenges that limit reliability, scalability, and long‐term stability, thereby hindering practical implementation. Furthermore, the existing gaps in memristor research are highlighted, and possible strategies and solutions are proposed to enable the device's realization for future prospects.