A comprehensive review of rare earth oxide assisted interlayer for MIS Schottky diodes: A route to enhanced device efficiency

Abstract

Metal–Insulator–Semiconductor (MIS) Schottky diodes have emerged as reliable devices for optoelectronic and sensing applications owing to their stable interfaces and reduced leakage behavior. As the insulating layer largely governs interface states, charge transport pathways, and overall device response, its optimization remains central to performance improvement. This review examines the growing use of rare-earth (RE) oxides as insulating layers in MIS Schottky diodes and outlines the fabrication approaches employed to integrate these materials effectively. Incorporation of RE oxides is shown to enhance crystallinity, refine surface morphology, suppress interface-related defects, and enhance optical absorption, collectively leading to improved photosensitivity and electrical characteristics. Key insights from structural, optical, and electrical characterizations are summarized to highlight these advancements. Broader applications enabled by RE-based insulating layers are also discussed. The review concludes with future perspectives, emphasizing that RE oxides engineering offers a promising route toward high-sensitivity, stable, and multifunctional MIS Schottky diodes suited for next-generation electronic and photonic technologies.