Goverment Siddha Medical College

High-k transition metal oxides in MIS Schottky diodes: Interface and charge transport mechanisms

Transition metal oxide (TMO) interfacial layers in Metal–Insulator–Semiconductor (MIS) Schottky diodes represent a major advancement in optoelectronic device engineering, offering superior performance compared to conventional metal–semiconductor structures. This review systematic...

A comprehensive review of rare earth oxide assisted interlayer for MIS Schottky diodes: A route to enhanced device efficiency

Metal–Insulator–Semiconductor (MIS) Schottky diodes have emerged as reliable devices for optoelectronic and sensing applications owing to their stable interfaces and reduced leakage behavior. As the insulating layer largely governs interface states, charge transport pathways, and...