Samsung (South Korea)

A sacrificial HfN interlayer enables oxygen-buffered Mo electrodes for sub‑0.4nm equivalent oxide thickness of HfO2/ZrO2 nanolaminates for DRAM capacitors

Continued scaling of dynamic random-access memory (DRAM) capacitors demands simultaneous achievement of high capacitance density and extremely low leakage current at ever-decreasing physical thickness, making interfacial chemistry and defect control as critical as the choice of h...

Crafting Creativity: How Professionals Shape AI Outputs Through Prompt Engineering

The growing use of generative AI in professional work has renewed debates over human agency, authorship, and creative contribution. While prompt engineering is often described as a technical operation, its meaning varies across professional contexts. This study investigates how l...