Sungjun Kim

Charge‐Domain In‐Memory Computing With NAND‐Compatible Ferroelectric Memcapacitor Crossbar

ABSTRACT Rapid growth in artificial intelligence has intensified the need for energy‐efficient computing architectures beyond the conventional von Neumann paradigm. While memristive in‐memory computing has attracted significant attention, its low cell resistance causes static pow...

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

ABSTRACT Although indium‐gallium‐zinc oxide (IGZO) has been widely used in thin‐film transistors (TFTs), its application as an active switching medium in resistive random‐access memory (RRAM) has remained relatively less explored, particularly for vertical RRAM (VRRAM) architectu...