Ruei-Ci Wu

Impact of Source Contact Segmentation on the Electrical Characteristics of 4H‐SiC Planar MOSFETs

Source contact (SC) segmentation is investigated as a layout approach for tuning the capacitance, conduction, blocking, and switching characteristics of 1.7 kV 4H‐silicon carbide (4H‐SiC) planar metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). Three‐dimensional TCAD...