Pravan Omprakash

Twist-Induced Out-of-Plane Ferroelectricity in Bilayer Hafnia

Abstract Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the polar orthorhombic phase responsible for ferroelectricity is metastable and requires extrinsi...

Antiferroelectric hafnia down to the 2D limit

Antiferroelectricity is a material property characterized by alternating electric dipoles spontaneously ordered in antiparallel directions. Antiferroelectrics are promising for energy storage, solid-state cooling, and memory technologies; however, these materials are scarce, and...