N. B. Balamurugan

Integrated Thermal Noise Analysis of Ferroelectric-Doped Dual-Metal-Gate GaN HEMTs for High-Frequency Low-Noise Systems

Abstract Accurate noise prediction is essential for reliable high-frequency semiconductor device design. This work presents an integrated analytical framework for evaluating thermal noise in a ferroelectric (Fe)-doped, dual-metal-gate (DMG) AlN/AlGaN/GaN HEMT, based on the Cappy...