M.Mosaddequr Rahman

Channel decoupling of the memory window in CuInP2S6-gated two-dimensional ferroelectric transistors: conditions, limits, and implications for interface processing

We ask which properties of the channel can change the memory window of a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) ferroelectric transistor gated by CuInP 2 S 6 . For a window read at a constant drain current we derive a conditional expression: if the floating gat...