The team used a back-end manufacturing process, applied after the main chip components had been fabricated, to create W centers in silicon-on-insulator photonic chips. With a 7.0 MeV implant energy, the chips produced W-center photoluminescence comparable to that achieved with earlier in-house fabrication methods.

Tests indicated that the emitted light came from the chip’s enclosed device layer, rather than from another part of the structure. The researchers also found that the added process preserved the electrical operation of the foundry-made components.