Bipolar Hot Carrier‐Driven Switchable Photocurrent Polarity in Plasmonic‐Functionalized Phototransistor for All‐Optical‐Configured Neuromorphic Computing

Abstract

ABSTRACT Photocarrier engineering in semiconductors is critical for developing advanced optoelectronic devices. Plasmonic hot carriers enable effective modulation of the photocarrier behavior in semiconductor systems, yet their full potential is restricted by the exploitation of unipolar charges. Herein, by integrating a plasmonic Ag nanoplate layer with an asymmetric MoS 2 transistor, we introduce a plasmon‐enabled photocarrier engineering strategy that achieves vertical bipolar‐hot‐carrier (both hot electrons and hot holes) harvesting and utilization in an n‐type 2D material device for the first time. Hot electron injection into the MoS 2 channel leads to a maximum 50‐fold photoresponsivity enhancement, while hot hole diffusion to the MoS 2 ‐Au electrode interface enables the barrier‐controllable regulation of photoconductivity polarity triggered by optical intensity and wavelength. The multiple‐stimuli‐responsive polarity‐switching characteristic of the hybrid architecture allows for the hardware implementation of an artificial plasmonic neuromorphic system capable of simulating different neural plasticity and performing logical operations with enhanced accuracy. This work presents an innovative framework for the rational design of plasmonic bipolar‐hot‐carrier engineered semiconductor devices with novel functionalities and highlights opportunities for the development of next‐generation optoelectronic intelligence applications.