MoS 2 /Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

Abstract

ABSTRACT Molybdenum disulfide () and graphene, as two significant members of the two‐dimensional family, have garnered considerable attention for enhanced non‐volatile memory (NVM) applications. Nonetheless, the synaptic behavior of the /graphene floating‐gate structures is yet to be comprehensively validated. This study presents a /graphene floating gate transistor designed for logic switching, non‐volatile memory, and neuromorphic applications. The implementation of a graphene Dirac‐source contact enables the device to achieve a subthreshold slope of 25 mV/decade, stable p‐type transistor operation, and a high ON/OFF current ratio of 10 with sub‐nanowatt power consumption. The programming–erasing time is approximately 11 ns, a memory window of 5.9 V, and a projected 10‐year retention of 91%. Synaptic functionality is further demonstrated through potentiation–depotentiation behavior, short‐ and long‐term plasticity, as well as spike‐timing‐dependent plasticity [STDP], offering a platform toward next‐generation low‐power logic devices, reliable non‐volatile memory technologies, and neuromorphic computing systems.