Evolution of the Surface Composition of Graphene Oxide Films During Laser-Induced Reduction
Abstract
Graphene oxide (GO) and reduced graphene oxide (rGO) are widely studied two-dimensional carbon nanomaterials for optoelectronic devices. Because the oxygen content and degree of reduction govern the electronic structure of GO-derived films, controlling the reduction process is essential for tailoring their properties. Laser-induced reduction provides a tunable, contact-free route to transparent and conductive graphene-based layers. In this work, 80 nm spray-coated GO layers were reduced using a KrF excimer laser (248 nm, 20 ns) at a fluence of 20 mJ cm−2, while systematically varying the number of laser pulses (LP) from 1 to 1000. We tuned the degree of GO reduction by stepwise increasing the number of LP and followed the resulting changes in surface composition using X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine-structure (NEXAFS) spectroscopy. The surface composition evolves non-monotonically with the number of laser pulses, revealing a multi-step reduction mechanism. At low laser doses, epoxide groups are preferentially removed or converted, generating a more disordered distribution of hydroxyl-containing sites on the GO sheets. At intermediate laser doses, oxygen-containing groups are depleted, and sp2 conjugation is restored. After extended irradiation in air, however, oxygenated surface species partially re-form. Conductivity measurements show that the sheet resistance reaches a minimum at approximately 300 LP, consistent with efficient chemical reduction and recovery of the conjugated carbon network. These results provide molecular-level guidelines for optimizing laser-induced GO reduction toward graphene-based transparent conductive layers.
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Authors: Paulo E. Marchezi, Stella Maragkaki, Andreas Michael, Zafer Hawash, Leif Ericsson, Kyriaki Savva, Marcin Zając, Emmanuel Stratakis, Ellen Moons
Institutions: Jagiellonian University, Karlstad University, Foundation for Research and Technology Hellas