Microscopic Injection, TLM Transfer Length, and Lateral Contact-Edge Resistance in Monolayer MoS2

Abstract

Corrected reproducible computational research note combining reported Bi/MoS2 contact measurements with a transparent WKB/Landauer consistency analysis and independent secondary validation of public TLM/XSTM evidence. Version 1.1.0 corrects Landauer state counting. Version 1.0.0 used h/(2q^2) while also including spin in the fourfold degeneracy. The corrected ideal width-normalized resistance is 43.86 ohm um and the required mean transmission is 0.627. The corrected effective-barrier range over 2.0-2.9 nm is 0.55-5.43 meV. The qualitative conclusion remains unchanged: a 0.10 eV barrier extending over the full approximately 2-3 nm scale is incompatible with the reported optimized contact within the reduced model. The package includes the corrected manuscript and PDF, simulation code, numerical sweeps, screened-Poisson/ballistic-NEGF cross-check, figures, public-code reproduction, image-level XSTM refits, uncertainty checks, contact-material comparison, experimental validation protocol, and a correction notice. This work is a computational note and has not undergone peer review.