Microscopic Injection, TLM Transfer Length, and Lateral Contact-Edge Resistance in Monolayer MoS2
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Abstract
Reproducible computational research note combining reported Bi/MoS2 contact measurements with a transparent WKB/Landauer consistency analysis. The package includes the Google Docs-ready manuscript, PDF, simulation code, numerical sweeps, figures, an open-data integrity audit, and a final novelty assessment. The main result is a consistency bound: at the reported carrier density, a measured contact resistance of 70 ohm um requires mean transmission of approximately 0.313 in the reduced model; a 0.10 eV barrier extending over 2-3 nm is incompatible with that measurement. This work is a computational note and has not undergone peer review.
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View paper (DOI)Open access versionOpenAlexZenodo (CERN European Organization for Nuclear Research)Published 2026-08-08
Authors: Chang Hwei Soh