STMicroelectronics (Switzerland)

InN Nanowires on Si⟨111⟩ and Si⟨100⟩ for Monolithic Short-Wave Infrared (SWIR) Photodetectors

Abstract InN nanowires were grown on Si⟨111⟩ and Si⟨100⟩ substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by back-end-of-line processing. Reflection high-energy electron diffra...