Spintronique et Technologie des Composants

Domain‐Wall Circulation Gating and Pinning via Compositional Engineering of Cylindrical Nanowires

ABSTRACT Spintronic devices based on cylindrical magnetic nanowires have been proposed as a route toward three–dimensional (3D) information storage and processing by harnessing the controlled motion of domain walls (DWs). In this geometry, the Bloch‐point wall (BPW) is the charac...

Thickness-Dependent Spintronic Terahertz Emission in Molecular Beam Epitaxy-Grown PtTe2: From Semiconductor to Type-II Dirac Semimetal

Abstract Spintronic THz emitters are the most practical broadband sources, but their performance is constrained by the spin Hall conductivity of the conversion layer. We show that PtTe2, a type II Dirac semimetal, overcomes this limitation through thickness-driven electronic phas...

Interface engineered perpendicular magnetic anisotropy-controlled propagation of magnetic domain

We report the impact of ferromagnetic layer thickness and stack configuration on the magnetic properties, perpendicular magnetic anisotropy (PMA), modified magnetization switching mechanisms, and creep regime domain wall (DW) dynamics, including their propagation velocity, in a P...

Orbital and Spin–Orbit Torque Interplay in Ta/W-Based Magnetic Tunnel Junctions with Vertical Nonlocal Switching

Abstract Spin–orbit torque (SOT) enables ultrafast, energy-efficient magnetization switching, making it promising for MRAM cache applications. However, current SOT-MRAM devices face write efficiency limitations, with charge-to-spin conversion (ξDL) reaching only ∼ 45%, well below...