Shri Mata Vaishno Devi University

Stability and Leakage Optimization for an SRAM Cell Using FinFET Technology

Introduction: The aggressive scaling of complementary metal-oxide-semiconductor (CMOS) into the deep nanometre regime has increased leakage power and reduced stability in conventional static random-access memory (SRAM) cells, posing issues for ultra-low-power applications. This s...

Economic Reforms, Marketing Mix and Firm Performance: Evidence from the Manufacturing Sector

Economic reforms initiated in 1991 exposed domestic manufacturing firms to foreign competition. These reforms created both new opportunities and threats for domestic firms. In response to the increasing presence of foreign competitors, domestic firms altered not only their produc...