Shanghai Fudan Microelectronics (China)

Stress-engineered 0.34 nm graphene memristors for low-power probabilistic computing

Memristors are promising for neuromorphic computing electronics, yet scaling is hindered by the difficulty of fabricating ordered nanoscale electrodes. Here, we report an angstrom-scale graphene-edge memristor with a geometrically defined 0.34 × 0.34 nm2 crossed-electrode area. K...

Statistics-enhanced cross-domain perception network for spaceborne infrared tiny ship detection

Spaceborne thermal infrared remote sensing is indispensable for maritime surveillance and ship management, yet detecting tiny ships in infrared imagery remains challenging due to small object sizes, weak textures, and strong structured clutter. To address these challenges, we pro...

Influence of many-body correlation and mixed-valence fluctuations on X-ray magnetic circular dichroism and resonant inelastic X-ray scattering spectra

X-ray magnetic circular dichroism (XMCD) and resonant inelastic X-ray scattering with magnetic circular dichroism (RIXS-MCD) provide unparalleled insights into the electronic and magnetic dynamics of complex materials. However, interpreting their spectra in mixed-valence systems...