Seoul Semiconductor (South Korea)

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO 3 FETs

ABSTRACT Strontium stannate perovskite (SrSnO 3 ) is emerging as a promising material for next‐generation ultra‐wide bandgap (UWBG) semiconductors due to its high electron mobility and optical transparency. However, despite the critical importance of defect analysis to utilize La...