Samsung (United Kingdom)

Low-Temperature Plasma-Induced Oxygen-Vacancy Engineering Enables Orthorhombic-Phase Stabilization in Hf0.5Zr0.5O2 for 2D FeFETs toward Monolithic 3D Integration

Abstract The rapid growth in artificial intelligence and large-scale data processing has driven the urgent demand for energy-efficient electronic devices. Ferroelectric materials, especially hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO), have emerged as promising candidates due to...