Samsung Electronics (South Korea)

Decoupled Channel and Contact Modulation in α-In2Se3/ZrO2/Hf0.5Zr0.5O2 Dual-Ferroelectric Field-Effect Transistor

Abstract Ferroelectric field-effect transistors (FeFETs) utilizing either a ferroelectric dielectric (FeD) or a ferroelectric semiconductor (FeS) are highly promising for neuromorphic computing. While integrating FeD with emerging FeS could provide new degrees of freedom for syna...

Dual-Layer Microencapsulated Phase Change Material Composite with Enthalpy-Active Shell for Thermal Absorption and Directional Heat Management

Abstract Localized heat accumulation in electronic devices degrades performance, safety, and cycle life. Phase change materials (PCMs) have been widely investigated for passive thermal regulation; however, conventional core–shell encapsulated PCMs often exhibit limited effective...