Leibniz Institute for High Performance Microelectronics

Rapid Lab‐Based In Situ Monitoring of Germanium Multiple Quantum Wells Interdiffusion

ABSTRACT The Silicon–Germanium (Si‐Ge) interdiffusion and its impact on the structural and optical properties of Ge/Si 0 .₁₈Ge 0 .₈ 2 multiple quantum wells (MQW) grown on Si by industry‐standard chemical vapor deposition are investigated. The structures, consisting of 186 period...

Diffusion‐Governed Growth Mechanisms of Epitaxial GaAs Islands on CMOS‐Compatible Si(001) Nanotip Arrays

ABSTRACT In this work, we investigate the diffusion‐controlled growth mechanism and kinetics of gallium arsenide (GaAs) islands on CMOS‐compatible Si(001) nanotip wafers using nanoheteroepitaxy by gas‐source molecular beam epitaxy. Si nanotips embedded in a silicon dioxide (SiO 2...

A high-density real-time 1024-pixel terahertz near-field imager in 130-nm SiGe BiCMOS

Abstract Terahertz near-field imaging enables high-resolution biomedical and material characterization by combining the non-ionizing nature of terahertz radiation with sub-wavelength spatial resolution. However, the scalability of existing solid-state near-field imagers is fundam...