Institution
Leibniz Institute for Crystal Growth
DE
Recent research
- Engineering & TechnologyOpen access
ABSTRACT In this work, we investigate the diffusion‐controlled growth mechanism and kinetics of gallium arsenide (GaAs) islands on CMOS‐compatible Si(001) nanotip wafers using nanoheteroepitaxy by gas‐source molecular beam epitaxy. Si nanotips embedded in a silicon dioxide (SiO 2...