Laboratoire Plasma et Conversion d'Energie

Modeling of Diamond Trench Metal Oxide Semiconductor Barrier Schottky Rectifier Based on Dynamic Reverse Bias Simulation Framework

This work presents an electrothermal optimization study of diamond‐based trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) rectifiers using mixed‐mode drift‐diffusion technology computer aided design simulations under quasi‐static and dynamic reverse‐bias conditions....