Laboratoire d'Électronique des Technologies de l'Information

Thickness-Dependent Spintronic Terahertz Emission in Molecular Beam Epitaxy-Grown PtTe2: From Semiconductor to Type-II Dirac Semimetal

Abstract Spintronic THz emitters are the most practical broadband sources, but their performance is constrained by the spin Hall conductivity of the conversion layer. We show that PtTe2, a type II Dirac semimetal, overcomes this limitation through thickness-driven electronic phas...

Photonic integrated recurrent spectrum slicer enabling low complexity direct detection over 200 GBaud dispersive links

Abstract The rising demand for data-intensive workloads in the network is driving the development of scalable and energy-efficient optical communication infrastructure. Intensity modulation with direct detection (IM/DD) remains the preferred choice for cost-sensitive systems but...

Immobilization of Alginate Microbeads With Whole‐Cells Expressing Nitrilase for Continuous Nicotinic Acid Production in Chip Millireactor

ABSTRACT The biocatalytic production of nicotinic acid using nitrilases has emerged as a promising alternative to conventional chemical synthesis, offering improved selectivity and environmental sustainability. In this study, we developed a continuous‐flow millireactor system emp...

Orbital and Spin–Orbit Torque Interplay in Ta/W-Based Magnetic Tunnel Junctions with Vertical Nonlocal Switching

Abstract Spin–orbit torque (SOT) enables ultrafast, energy-efficient magnetization switching, making it promising for MRAM cache applications. However, current SOT-MRAM devices face write efficiency limitations, with charge-to-spin conversion (ξDL) reaching only ∼ 45%, well below...

Unsupervised deep learning for limited-angle STEM-EDX tomography: application to 3D chemical analysis of phase-change memory devices

Abstract Energy-dispersive X-ray (EDX) tomography in scanning transmission electron microscopy (STEM) enables three-dimensional elemental mapping at the nanoscale. However, its application remains challenging when sample geometry severely restricts the accessible tilt range, and...

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

ABSTRACT III‐V materials exhibit superior optoelectronic properties compared to conventional semiconductors, making them ideal for short‐wavelength infrared (SWIR) photodetectors. These devices are in demand for applications such as telecommunications, LiDAR, and biomedical engin...

Behavioral changes preceded by subthalamic nucleus activity alterations in a progressive macaque model of Parkinson’s disease

Abstract Parkinson’s disease (PD) is diagnosed after motor symptoms appear, although non-motor symptoms emerge years earlier. Following years of pharmacological treatment, high-frequency stimulation (HFS) of the subthalamic nucleus (STN), a key hub in goal-directed behaviors, can...