Kobe Institute Of Computing

Defect-induced recombination analysis in 4H-SiC epitaxial layers based on detailed microwave photoconductive decay curve evaluation

Evaluation of defect-related carrier lifetimes in 4H-SiC epitaxial layers is essential for assessing material quality and device performance. The microwave photoconductive decay (μ-PCD) method is widely used for wafer-level lifetime characterization; however, conventional evaluat...

Identification of Relationship Lending in Bank–Borrower Networks

ABSTRACT Relationship lending refers to lending based on close bank–borrower relationships, expected to increase credit availability and support real economic activity. This paper proposes the ST‐B filter, a novel framework identifying significant ties in temporal bipartite netwo...