Institute of Semiconductor Physics

SiO2 layers with the reduced dielectric permittivity produced by the anodic oxidation of Si substrates containing ion beam-synthesized SiC nanoparticles

The anodic oxidation of 90 keV CO + ion-implanted Si substrates was investigated as a function of the ion dose ranging from 2.5 × 10 15 to 5 × 10 16 cm −2 after the annealing at the temperature of 1100 °C. SRIM software calculations, spectral ellipsometry, Fourier transform infra...