Institution
Institute of Microelectronics
Recent research
- Materials & Energy
ABSTRACT Organic electrochemical transistors (OECTs) are promising building blocks for bioelectronics owing to their efficient ion–electron coupling, soft‐material compatibility and high transconductance. However, their large off‐state currents and poor scalability have so far li...
- Engineering & TechnologyOpen access
Oxide semiconductors field-effect transistors (OS FETs) capable of simultaneously delivering high mobility and excellent reliability are a key platform for high-performance circuits and memory modules in monolithic three-dimensional integrated circuits (M3D ICs). In this work, we...
- Physics & Space
In this work, we demonstrate a composite crystalline aluminum nitride (AlN) passivation layer for near-junction thermal management in aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). The 120-nm-thick AlN film consists of an ordered...
- Engineering & Technology
HZO thickness-dependent charge loss mechanisms in HfO2-based MIFIS FeFETs
Hafnium-based ferroelectric field-effect transistors (FeFETs) with metal/gate interlayer/ferroelectric/channel interlayer/silicon (MIFIS) gate stacks are a promising candidate for high-density 3D NAND. However, the severe retention degradation hinders their application, and the d...
- Physics & SpaceOpen access
This paper presents a study of position-dependent signal propagation delay in large-pitch pixelated AC-coupled Low-Gain Avalanche Detectors (AC-LGADs). In AC-LGADs, a continuous resistive N+ layer and segmented AC-coupled readout electrodes enable charge sharing and simultaneous...
- Engineering & Technology
ABSTRACT With the rapid development of autonomous vehicles, robotics, and monitoring systems, the demand for having visual system capable of recognizing explicit motion information, such as motion direction, state, and speed, has increased substantially. To address this demand, b...