Institute for Nuclear Science and Technology

Investigations of Depth Profile of Native Oxide Layers Covering GaAs Implanted with Noble Gas by Rutherford Backscattering Spectroscopy with Nuclear Reaction

The samples employed in the investigation were semi-insulating GaAs wafers. Noble gas has been implanted using the UNIMAS ion implanter at energy 100 keV, fluence of 3 × 1015 ions/cm2. Rutherford backscattering spectroscopy with nuclear reaction analysis (RBS/NR) method was used...