Direction de la Recherche Technologique

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

ABSTRACT III‐V materials exhibit superior optoelectronic properties compared to conventional semiconductors, making them ideal for short‐wavelength infrared (SWIR) photodetectors. These devices are in demand for applications such as telecommunications, LiDAR, and biomedical engin...