China Electronic Product Reliability and Environmental Test Institute

Temperature-dependent electrical performance of β-Ga2O3 Schottky barrier diodes under 5 MeV proton irradiation

This work examines the effects of 5 MeV proton irradiation at a fluence of 1 × 10 13 cm −2 on the electrical characteristics of β-Ga 2 O 3 Schottky barrier diodes over a temperature range of 25 °C to 100 °C. Current–voltage (I-V), capacitance–voltage (C-V), and deep-level transie...

Self‐Powered MXene/a‐Ga 2 O 3 Schottky Solar‐Blind UV Photodetector for UV Imaging and Optical Communication

ABSTRACT Self‐powered solar‐blind ultraviolet photodetectors have garnered significant attention across environmental, industrial and military domains, owing to their ability to perform power‐independent photodetection with high environmental sensitivity. Here, we report an advan...