Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Mechanical decoupling epitaxy via compliant microdisks yields relaxed transferable AlGaN across broad compositions

Abstract Achieving high-quality, crack-free AlGaN layers across a wide aluminum composition range is critical for ultraviolet optoelectronics but remains challenging due to strain-induced defects from lattice and thermal mismatches. Here we present a mechanical decoupling epitaxy...