Central University of Jammu

Growth mechanisms and characteristics of near-interface traps in SiC/SiO2 interfaces for next generation power devices: A short review

Silicon carbide (SiC) has emerged as a leading wide-bandgap semiconductor for high-voltage and high-temperature power electronics; however, the performance of SiC metal–oxide–semiconductor (MOS) devices remain limited by the electrical quality of the SiC/SiO 2 interface. This rev...