Central University of Jammu

Dual-Gaussian Schottky barrier distribution in CVD graphene/n-Si diodes from temperature-dependent transport

The transformative potential of graphene/Si Schottky junctions for electronic and power-electronic applications stems from their exceptional thermal and chemical resilience compared to conventional metal contacts. In this work, chemical vapor deposition-grown graphene was transfe...

From global texts to local voices: teachers’ views on cultural engagement and resource gaps in Indian Literature in English at the tertiary level of Jammu & Kashmir

English studies in Indian higher education are undergoing a significant transformation. Indian students often experience a linguistic and cultural gap because curricula continue to emphasize American and British literature (Gupta, 2016; Sen, 2023). The National Education Policy (...

Systematic review of ethical perception in online retailing: a comparison of Eastern and Western perspectives

Purpose This systematic literature review aims to examine consumers’ ethical perceptions in online retailing by comparing Eastern and Western perspectives and explaining how these differences influence consumer repurchase intention. Design/methodology/approach Following the PRISM...

Bionomics of insect pollinators and their interaction with host trees in the orchards of Doda, Indian Himalayas

Abstract Insect-mediated pollination is critical to the reproductive success of apple ( Malus domestica ) and apricot ( Prunus armeniaca ), the two principal cash crops sustaining rural livelihoods in the Himalayan district of Doda, Jammu and Kashmir. Despite this dependence, pol...

Optical properties evaluation of novel lead-free CsCu2Cl2I in different solvents to investigate solvatochromism behaviour

In this work, cesium iodide and copper chloride were dissolved in N,N-dimethylformamide (DMF) to make a novel double halide lead-free metal halide perovskite (DH-LFP), i.e., CsCu 2 Cl 2 I. This was done at room temperature using an anti-solvent precipitation method. Afterwards, p...

Growth mechanisms and characteristics of near-interface traps in SiC/SiO2 interfaces for next generation power devices: A short review

Silicon carbide (SiC) has emerged as a leading wide-bandgap semiconductor for high-voltage and high-temperature power electronics; however, the performance of SiC metal–oxide–semiconductor (MOS) devices remain limited by the electrical quality of the SiC/SiO 2 interface. This rev...