Zhongming Zeng

Room-temperature terahertz emission from N-polar GaN grating-gate high-electron-mobility transistors

Compact, electrically driven terahertz (THz) sources remain a major bottleneck for chip-scale spectroscopy, imaging and high-speed wireless links. AlGaN/GaN two-dimensional electron gas (2DEG) systems have been investigated for THz emission, but experimental demonstrations have a...

Stabilized h-BN release layer on PVD-AlN/sapphire template for high-performance GaN-based flexible weak-light photodetectors

Layered hexagonal boron nitride (h-BN) enables the release and transfer of III-nitride epilayers toward flexible electronics, but its insufficient interfacial adhesion to the substrate would limit its compatibility with conventional fabrication processes. Here, based on a sapphir...