Zhangang Zhang

Temperature-dependent electrical performance of β-Ga2O3 Schottky barrier diodes under 5 MeV proton irradiation

This work examines the effects of 5 MeV proton irradiation at a fluence of 1 × 10 13 cm −2 on the electrical characteristics of β-Ga 2 O 3 Schottky barrier diodes over a temperature range of 25 °C to 100 °C. Current–voltage (I-V), capacitance–voltage (C-V), and deep-level transie...