Zeqi Zang

Controllable Growthof GaSb Nanowires Catalyzed byBi Films for Flexible Near-Infrared Photodetectors

Abstract With a direct narrow band gap and high hole mobility, the III–V group semiconductors of GaSb nanowire (NW) are considered as promising channel materials for next-generation high-performance nanoelectronics and infrared photodetectors. In this study, the complementary met...