Yuanzhi HE

Homoepitaxial GaN-on-GaN trench MOSFETs with 438 MW/cm2 figure of merit and improved gate reliability

In this paper, we report enhanced high-voltage blocking capability and improved gate dielectric reliability in vertical GaN-on-GaN trench metal–oxide–semiconductor field-effect transistors (MOSFETs) through fabrication process optimization. A thick bottom dielectric (TBD) is intr...