Yiming Tan

Local Vibration Modes for Determining the Ge Ga + Fingerprint Peak in Gallium Nitride (GaN) via First-Principles Calculations

Abstract Highly conductive silicon-doped gallium nitride (GaN) is commonly used in high-power optoelectronics and electronics. Alternatively, germanium (Ge) can achieve a higher doping concentration than silicon, as its atomic size is similar to that of Ga. Precisely understandin...